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SiR890DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
110
88
66
44
22
0
Package Limited
0
25
50
75
100
125
150
T C - Case Temperat u re (°C)
Current Derating*
60
4 8
36
24
12
0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T C - Case Temperat u re (°C)
Power, Junction-to-Case
T A - Am b ient Temperat u re (°C)
Power, Junction-to-Ambient
* The power dissipation P D is based on T J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68644
S-83047-Rev. B, 22-Dec-08
www.vishay.com
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